| PART |
Description |
Maker |
| MIC922YC5 MIC922-06 |
230MHz Low-Power SC-70 Op Amp
|
Micrel Semiconductor
|
| AD1996 AD1996ACPZ AD1990 AD1990ACPZ AD1994 AD1992 |
Class-D Audio Power Amplifier D类音频功率放大器
Class-D Audio Power Amplifier – 2 × 5W
Class-D Audio Power Amplifier – 2 × 25W
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| 2N5591 RF55 2N5589 SD1216 2N5590 SD1212-02 SD1214- |
RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
Seme LAB
|
| LTM9002CV-LAPBF LTM9002IV-LAPBF LTM9002 LTM9002CV- |
14-Bit Dual-Channel IF/Baseband Receiver Subsystem
LTM9002-AA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: –40°C to 85°C SPECIALTY ANALOG CIRCUIT, PBGA108
LTM9002-LA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: –40°C to 85°C SPECIALTY ANALOG CIRCUIT, PBGA108
LTM9002-LA - 14-Bit Dual-Channel IF/ Baseband Receiver Subsystem; Package: 108-Lead (15mm × 11.25mm × 2.3mm) LGA; Temperature Range: 0 to 70°C
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| RA07M2127M10 |
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| LTC3204-3.3 LTC3204-5 |
Low Noise Regulated Charge Pump in 2 × 2 DFN
|
Linear Technology
|
| HPR104W/H HPR114W/H HPR115W/H HPR105W/H HPR106W/H |
Ribbon contact connectors; HRS No: 215-0089-0 59
Analog IC 模拟IC
|
Hitachi,Ltd.
Newhaven Display International, Inc.
|
| NJU6677 |
88Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6678V |
104Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| NJU6679 |
128Com × 132Seg Output Bit Map LCD Driver
|
New Japan Radio
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
